Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion

被引：13

作者：

Kamgar, A ^{[1
]}

Vuong, HH ^{[1
]}

Liu, CT ^{[1
]}

Rafferty, CS ^{[1
]}

Clemens, JT ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The trend of reverse short channel effect (RSCE) with nitrogen implant dose, gate oxide thickness, and threshold implant dose have been measured and simulated. Thinner gate oxide reduces RSCE. Implanting nitrogen also reduces RSCE, but exactly in proportion to gate oxide reduction; no extra effect of the large nitrogen dose was found. Furthermore, a saturation of TED-induced dopant pile-up with accumulating implant dose is shown.

引用

页码：695 / 698

页数：4