Nonequilibrium segregation of phosphorus in the system silicon dioxide silicon

被引：5

作者：

Aleksandrov, OV ^{[1
]}

Afonin, NN

机构：

[1] Svetlana Poluprovodniki, St Petersburg 191156, Russia

[2] Voronezh State Pedag Univ, Voronezh 394043, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 01期

关键词：

Oxidation; Silicon; Experimental Data; Phosphorus; Mass Transfer;

D O I：

10.1134/1.1187351

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model of diffusion-segregation impurity redistribution in the system SiO2-Si during the thermal oxidation of silicon is developed, taking into account the nonequilibrium character of the segregation process at the moving phase boundary. The temperature dependence of the mass transfer of phosphorus and its mass-transfer coefficient at the SiO2-Si interface are determined by the numerical analysis of experimental data. (C) 1998 American Institute of Physics.

引用

页码：15 / 18

页数：4

共 14 条

[1]

Aleksandrov O. V., 1984, Soviet Physics - Solid State, V26, P384

[2]

Aleksandrov OV, 1996, SEMICONDUCTORS+, V30, P823

[3]

ALEKSANDROV OV, 1990, IZV VYSSH UCHEBN ZAV, P97

[4]

[Anonymous], 1985, Spatial Distributions of Energy Released in a Cascade of Atomic Collisions in Solids

[5] IMPURITY REDISTRIBUTION IN SIO2-SI DURING OXIDATION - NUMERICAL-SOLUTION INCLUDING INTERFACIAL FLUXES [J].

ANTONIADIS, DA ;

RODONI, M ;

DUTTON, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :1939-1945

[6]

BAZAROV IP, 1983, THERMODYNAMICS, P179

[7]

Fair R. B., 1981, Impurity doping processes in silicon, P315

[8] VLSI PROCESS MODELING - SUPREM-III [J].

HO, CP ;

PLUMMER, JD ;

HANSEN, SE ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1438-1453

[9]

HO CP, 1978, J ELECTROCHEM SOC, V125, P813

[10]

KOLOSOVSKII AV, 1971, REV ELECT ENG SERIES, V6

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