Optical properties of high-Al-content crack free AlxGa1-xN (x < 0.67) films grown on Si(111) by molecular-beam epitaxy

被引：2
作者：
Natali, F [1 ]
Byrne, D [1 ]
Leroux, M [1 ]
Semond, F [1 ]
Massies, J [1 ]
机构：
[1] CNRS, Ctr Rech Heteroepitaxie Applicat, F-06560 Valbonne, France
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 10期
关键词：
semiconductors; thin films; epitaxy; optical properties; luminescence;
D O I：
10.1016/j.ssc.2004.09.017
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the optical properties of high-Al-content crack free AlxGa1-xN (x<0.67) films grown by molecular-beam epitaxy on Si(111) substrates using ammonia as nitrogen source. The energetic position of the Al free exciton as a function of the Al content is determined from photoluminescence and reflectivity measurements at low temperature. A bowing parameter of b =1 eV is deduced from these measurements. The excitonic linewidth increases as a function of Al concentration. The observed variation agrees very well with the one calculated using a model in which the broadening effect is assumed to be due to alloy compositional disordering. (C) 2004 Elsevier Ltd. All rights reserved.
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页码：679 / 682
页数：4
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