Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation

被引：18
|
作者：
Akgul, Fatime Duygu [1 ]
Eymur, Serkan [1 ]
Akin, Ummuhan [2 ]
Yuksel, Omer Faruk [2 ]
Karadeniz, Hande [1 ]
Tugluoglu, Nihat [1 ]
机构：
[1] Giresun Univ, Dept Energy Syst Engn, Giresun, Turkey
[2] Selcuk Univ, Dept Phys, Konya, Turkey
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 12期
关键词：
ELECTRICAL PERFORMANCE; PARAMETERS; CAPACITANCE; DEFECTS; DENSITY; SIZE;
D O I：
10.1007/s10854-021-06138-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage characteristics of Au/SnO2/n-Si Schottky diode before and after irradiation by Co-60 gamma-ray with an irradiation dose of 10 kGy have been investigated. The effects of gamma-ray irradiation on the main diode parameters have been studied. The forward bias ln(I-F)-ln(V-F) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO2/n-Si Schottky diode has been examined through ln(I-R)-V-R(1/2) characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy.
引用
收藏
页码：15857 / 15863
页数：7
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