A study of indium incorporation in In-rich InGaN grown by MOVPE

被引：54

作者：

Guo, Y. ^{[1
]}

Liu, X. L. ^{[1
]}

Song, H. P. ^{[1
]}

Yang, A. L. ^{[1
]}

Xu, X. Q. ^{[1
]}

Zheng, G. L. ^{[1
]}

Wei, H. Y. ^{[1
]}

Yang, S. Y. ^{[1
]}

Zhu, Q. S. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 10期

基金：

美国国家科学基金会;

关键词：

MOVPE; In-rich InGaN; Indium incorporation; MOLECULAR-BEAM EPITAXY; CRITICAL THICKNESS; DROPLET FORMATION; FILMS; HETEROSTRUCTURES; IMMISCIBILITY; TEMPERATURE;

D O I：

10.1016/j.apsusc.2009.11.081

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3352 / 3356

页数：5

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