Crystal structure and magnetic properties of Cr-doped AlN films with various Cr concentrations

被引:6
作者
Endo, Yasushi [1 ]
Sato, Takanobu [1 ]
Kawamura, Yoshio [1 ]
Yamamoto, Masahiko [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan
关键词
aluminum-nitride; chromium concentration; crystal structure; room-temperature ferromagnetism; magnetic state;
D O I
10.2320/matertrans.48.465
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the crystal structure and magnetic properties of Cr-doped AlN (Al1-xCrxN) films in the range of Cr concentration (x) of 0.04-0.37. The film changes from a wurtzite-type AlN phase for x = 0.04-0.20 to a wurtzite-type AlN phase and zinc-blende-type AlN mixed phase for x = 0.24, and further to only the zinc-blende-type AlN phase with increasing x. The Cr atoms are considered to occupy Al sites in spite of the change of AlN phase with x. Room-temperature (RT) ferromagnetism is not observed at any x. The magnetic state at 10 K of the film is considered to change from a paramagnetic state to a paramagnetic state or a superparamagnetic state, and further to a paramagnetic state as X increases. Ferromagnetic state is not observed at 10 K regardless of x.
引用
收藏
页码:465 / 470
页数:6
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