Gas-sensing properties of semiconductor heterolayers fabricated by a slide-off transfer printing method

被引:20
作者
Kawahara, A
Yoshihara, K
Katsuki, H
Shimizu, Y
Egashira, M
机构
[1] Nagasaki Univ, Fac Engn, Dept Mat Sci & Engn, Nagasaki 8528521, Japan
[2] Saga Ceram Res Lab, Fine Ceram Div, Saga 8440024, Japan
关键词
SnO2 gas sensors; sensitivity to hydrogen; heterolayers; thick films; slide-off transfer printing;
D O I
10.1016/S0925-4005(99)00405-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Single layers, multilayers and heterolayers of SnO2-based materials were fabricated by a slide-off printing method and their sensing properties to 1% H-2 in air were investigated. By selecting an appropriate combination of materials for the lower and upper layers of a heterolayer sensor, the sensitivity or the resistance decrease upon exposure to H-2 could be enhanced at temperatures above 300 degrees C, compared with those of the constituent single layers. In a heterolayer sensor of SnO2/Pt-SnO2, the upper SnO2 layer was suggested to enhance the sensitivity of the Pt-SnO2 underlayer by functioning as a filter for O-2 permeation. At 200 degrees C, on the other hand, most of the sensors fabricated exhibited a tendency for the resistance to increase upon exposure to H-2, probably due to negatively charged chemisorption of H-2. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:17 / 22
页数:6
相关论文
共 12 条
[1]   GAS-SENSING CHARACTERISTICS OF TIN OXIDE WHISKERS WITH DIFFERENT MORPHOLOGIES [J].
EGASHIRA, M ;
MATSUMOTO, T ;
SHIMIZU, Y ;
IWANAGA, H .
SENSORS AND ACTUATORS, 1988, 14 (03) :205-213
[2]   EFFECT OF GAS-DIFFUSION PROCESS ON SENSING PROPERTIES OF SNO2 THIN-FILM SENSORS IN A SIO2/SNO2 LAYER-BUILT STRUCTURE FABRICATED BY SOL-GEL PROCESS [J].
FENG, CD ;
SHIMIZU, Y ;
EGASHIRA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (01) :220-225
[3]   EFFECT OF MICROSTRUCTURE OF AN SIO2 THIN-FILM ON THE H-2-SENSING PROPERTY OF AN SNO2 SENSOR IN AN SIO2/SNO2 DOUBLE-LAYERED STRUCTURE [J].
FENG, CD ;
SHIMIZU, Y ;
EGASHIRA, M .
DENKI KAGAKU, 1993, 61 (07) :905-906
[4]   Fabrication of semiconductor oxide thick films by slide-off transfer printing and their NO2-sensing properties [J].
Kawahara, A ;
Katsuki, H ;
Egashira, M .
SENSORS AND ACTUATORS B-CHEMICAL, 1998, 49 (03) :273-278
[5]   EFFECTS OF THICKNESS AND ADDITIVES ON THIN-FILM SNO2 GAS SENSORS [J].
KLOBER, J ;
LUDWIG, M ;
SCHNEIDER, HA .
SENSORS AND ACTUATORS B-CHEMICAL, 1991, 3 (01) :69-74
[6]   ELECTRONIC INTERACTION BETWEEN METAL ADDITIVES AND TIN DIOXIDE IN TIN DIOXIDE-BASED GAS SENSORS [J].
MATSUSHIMA, S ;
TERAOKA, Y ;
MIURA, N ;
YAMAZOE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (10) :1798-1802
[7]   EFFECTS OF DIFFUSIVITY OF HYDROGEN AND OXYGEN THROUGH PORES OF THICK-FILM SNO2-BASED SENSORS ON THEIR SENSING PROPERTIES [J].
SHIMIZU, Y ;
NAKAMURA, Y ;
EGASHIRA, M .
SENSORS AND ACTUATORS B-CHEMICAL, 1993, 13 (1-3) :128-131
[8]   THICKNESS DEPENDENCE OF H-2 GAS SENSOR IN AMORPHOUS SNOX FILMS PREPARED BY ION-BEAM SPUTTERING [J].
SUZUKI, T ;
YAMAZAKI, T ;
YOSHIOKA, H ;
HIKICHI, K .
JOURNAL OF MATERIALS SCIENCE, 1988, 23 (01) :145-149
[9]   HIGH AMMONIA SENSITIVE SEMICONDUCTOR GAS SENSORS WITH DOUBLE-LAYER STRUCTURE AND INTERFACE ELECTRODES [J].
TAKAO, Y ;
MIYAZAKI, K ;
SHIMIZU, Y ;
EGASHIRA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (04) :1028-1034
[10]   Effect of sensor thickness on trimethylamine sensitivity of In2O3-MgO sensors loaded with noble metals [J].
Takao, Y ;
Han, MH ;
Shimizu, Y ;
Egashira, M .
DENKI KAGAKU, 1996, 64 (12) :1280-1284