Strain state analysis of hetero-epitaxial systems

被引：8

作者：

Al-Falou, AA ^{[1
]}

Kammler, M ^{[1
]}

Hoegen, MHV ^{[1
]}

机构：

[1] Univ Essen Gesamthsch, Inst Laser & Plasmaphys, D-45117 Essen, Germany

来源：

EUROPHYSICS LETTERS | 2005年 / 69卷 / 04期

关键词：

D O I：

10.1209/epl/i2004-10399-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.

引用

页码：570 / 576

页数：7

共 21 条

[1] ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES [J].

ANDROUSSI, Y ;

LEFEBVRE, A ;

COURBOULES, B ;

GRANDJEAN, N ;

MASSIES, J ;

BOUHACINA, T ;

AIME, JP .

APPLIED PHYSICS LETTERS, 1994, 65 (09) :1162-1164

[2] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[3] THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].

CULLIS, AG ;

ROBBINS, DJ ;

PIDDUCK, AJ ;

SMITH, PW .

JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343

[4] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[5] RELAXED GEXSI1-X STRUCTURES FOR III-V INTEGRATION WITH SI AND HIGH MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI [J].

FITZGERALD, EA ;

XIE, YH ;

MONROE, D ;

SILVERMAN, PJ ;

KUO, JM ;

KORTAN, AR ;

THIEL, FA ;

WEIR, BE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1807-1819

[6]

HOEGEN MH, 1994, PHYS REV B, V49, P2637

[7]

HOEGEN MH, 1999, Z KRISTALLOGR, V214, P684

[8]

HOEGEN MH, 1999, Z KRISTALLOGR, V214, P591

[9] STRAIN RELIEF BY MICROROUGHNESS IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(001) [J].

HORNVONHOEGEN, M ;

MULLER, BH ;

ALFALOU, A .

PHYSICAL REVIEW B, 1994, 50 (16) :11640-11652

[10] LAYER-BY-LAYER GROWTH OF GERMANIUM ON SI(100) - STRAIN-INDUCED MORPHOLOGY AND THE INFLUENCE OF SURFACTANTS [J].

KOHLER, U ;

JUSKO, O ;

MULLER, B ;

HORNVONHOEGEN, M ;

POOK, M .

ULTRAMICROSCOPY, 1992, 42 :832-837

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