Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETs

被引：10
作者：
Ushiki, T
Ishino, H
Ohmi, T
机构：
[1] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[3] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期
基金：
日本学术振兴会;
关键词：
floating-body effect; generation/recombination events; low-frequency noise; SOI MOSFET;
D O I：
10.1109/55.887482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise properties of partially-depleted (PD) floating-body silicon-on-insulator (SOI) MOSFETs fabricated on two types of commercially available bonded SOI (BSOI) wafers mere experimentally investigated. In the pre-kink region, a drain bias dependent Lorentzian-like noise has been observed for UNIBOND wafers, while a pure 1/f noise has been achieved for ELTRAN wafers, Our analysis shows that the charge-fluctuation induced by emission process through intermediate-level centers in the drain-depletion region causes the instability in the body voltage, resulting in the pre-kink excess noise for UNIBOND wafers.
引用
收藏
页码：610 / 612
页数：3
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