Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by R-F-MBE

被引：4

作者：

Nakamura, Teruyuki ^{[1
]}

Endo, Yuta ^{[2
]}

Katayama, Ryuji ^{[1
]}

Yaguchi, Hiroyuki ^{[2
]}

Onabe, Kentaro ^{[1
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

[2] Saitama Univ, Fac Engn, Dept Elect & Elect Engn, Saitama 3388570, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674803

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High In content cubic InGaN films have been successfully grown on GaAs(001) substrates by rf-plasma assisted molecular beam epitaxy (RF-MBE). The X-ray diffraction analysis has confirmed the Ga content of the cubic InGaN films increases with increasing the group-III flux ratio (Ga/(Ga+In)). The maximum Ga content of the c-InGaN film is about 29% based on an analysis of the X-ray diffraction 2 theta/omega scan. By 2 theta/omega and omega X-ray reciprocal space mapping measurements, hexagonal-phase and twin-phase InGaN are found to be generated from c-InGaN {111} facets. By low temperature PL measurement, the c-In1-xGaxN peak shifts from 0.41 eV (x = 0) to 0.72 eV (x = 0.09) with increasing Ga content, showing that the bandgap of c-InGaN is similar to 300 meV smaller than that of h-InGaN with the same alloy composition. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2437 / +

页数：2

共 8 条

[1] (111) and (100) YSZ as substrates for indium nitride growth [J].

Anderson, PA ;

Kendrick, CE ;

Kinsey, RJ ;

Asadov, A ;

Gao, W ;

Reeves, RJ ;

Durbin, SM .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2320-2323

[2] Growth of cubic InN on r-plane sapphire [J].

Cimalla, V ;

Pezoldt, J ;

Ecke, G ;

Kosiba, R ;

Ambacher, O ;

Spiess, L ;

Teichert, G ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3468-3470

[3] RF-MBE growth of cubic InN films on MgO (001) substrates [J].

Iwahashi, Y. ;

Yaguchi, H. ;

Nishimoto, A. ;

Orihara, M. ;

Hijikata, Y. ;

Yoshida, S. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1515-1518

[4] Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy [J].

Lima, AP ;

Tabata, A ;

Leite, JR ;

Kaiser, S ;

Schikora, D ;

Schöttker, B ;

Frey, T ;

As, DJ ;

Lischka, K .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :396-398

[5] RF-MBE growth and structural characterization of cubic InN films on GaAs [J].

Nakamura, T. ;

Iida, K. ;

Katayama, R. ;

Yamamoto, T. ;

Onabe, K. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07) :1451-1455

[6]

NAKAMURA T, IN PRESS J CRYST GRO, P25329

[7] Epitaxial growth of hexagonal and cubic InN films [J].

Nishida, K ;

Kitamura, Y ;

Hijikata, Y ;

Yaguchi, H ;

Yoshida, S .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (12) :2839-2842

[8] Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy [J].

Yang, B ;

Brandt, O ;

Jenichen, B ;

Mullhauser, J ;

Ploog, KH .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) :1918-1920

← 1 →