Recent progress in cell-projection electron-beam lithography

被引：10
作者：
Sohda, Y
Ohta, H
Murai, F
Yamamoto, J
Kawano, H
Satoh, H
Itoh, H
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
[2] Hitachi High Technol Corp, Ibaraki 3128504, Japan
来源：
MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷
关键词：
cell projection lithography; electron beam lithography; electron optics; resist delineation;
D O I：
10.1016/S0167-9317(03)00062-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews and introduces recent methods for enhancing the performance of cell-projection lithography and describes various useful applications of this type of lithography. To increase the throughput, the area of the e-beam mask that is available for cell apertures was four-times increased. For enhanced lithographic resolution, the resolution in cell-beam measurement was enhanced. The method that uses transmitted electrons through a very fine hole in the stencil was improved. Much higher resolution is achieved compared as before. Moreover, several applications of cell-projection lithography were demonstrated to show its advantages. They included lithography in the fabrication of photo-masks and magnetic head devices those use plural cell apertures. Published by Elsevier Science B.V.
引用
收藏
页码：78 / 86
页数：9
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