Recent progress in cell-projection electron-beam lithography

被引：10

作者：

Sohda, Y

Ohta, H

Murai, F

Yamamoto, J

Kawano, H

Satoh, H

Itoh, H

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi High Technol Corp, Ibaraki 3128504, Japan

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷

关键词：

cell projection lithography; electron beam lithography; electron optics; resist delineation;

D O I：

10.1016/S0167-9317(03)00062-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews and introduces recent methods for enhancing the performance of cell-projection lithography and describes various useful applications of this type of lithography. To increase the throughput, the area of the e-beam mask that is available for cell apertures was four-times increased. For enhanced lithographic resolution, the resolution in cell-beam measurement was enhanced. The method that uses transmitted electrons through a very fine hole in the stencil was improved. Much higher resolution is achieved compared as before. Moreover, several applications of cell-projection lithography were demonstrated to show its advantages. They included lithography in the fabrication of photo-masks and magnetic head devices those use plural cell apertures. Published by Elsevier Science B.V.

引用

页码：78 / 86

页数：9

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