Infrared and electrical properties of amorphous sputtered (LaxAl1-x)2O3 films

被引：38
作者：
Devine, RAB
机构：
[1] USAF, Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 12期
关键词：
D O I：
10.1063/1.1576299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous (LaxAl1-x)(2)O-3 (0.61less than or equal toxless than or equal to0.73) films have been deposited by sputtering in a partially reactive atmosphere. The average dielectric constant of the as-deposited films was 13.4 and 12.5 following annealing at 700 degreesC for 60 min in N-2; both values were much lower than the single crystal values similar to24 and 28 for LaAlO3 and La2O3, respectively. Leakage current densities were similar to10(-8) A cm(-2) for an applied field of 1 MV cm(-1) for film thicknesses similar to75 nm. Fourier transform infrared spectroscopy reveals transverse optic mode peaks at 723 and 400 cm(-1) and corresponding longitudinal optic modes at 821 and 509 cm(-1). The density of the amorphous phase is estimated to be similar to0.9 times the crystalline density. (C) 2003 American Institute of Physics.
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页码：9938 / 9942
页数：5
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