Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires

被引：121

作者：

Sohn, Jung Inn

Joo, Heung Jin

Porter, Alexandra E.

Choi, Chel-Jong

Kim, Kinam

Kang, Dae Joon

Welland, Mark E. ^{[1
]}

机构：

[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[2] Samsung Elect Co, ATD Team, Memory Div, Semicond Business, Yongin, South Korea

[3] ETRI, Future Technol Res Div, Taejon 305700, South Korea

[4] SKKU Adv Inst Nanotechnol, Phys Res Div, Suwon, South Korea

[5] Sungkyunkwan Univ, CNNC, Suwon 440746, South Korea

来源：

NANO LETTERS | 2007年 / 7卷 / 06期

关键词：

D O I：

10.1021/nl070439q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

引用

页码：1570 / 1574

页数：5

共 37 条

[1] Germanium nanowire epitaxy: Shape and orientation control [J].