Origin of the high work function and high conductivity of MoO3

被引：108

作者：

Guo, Yuzheng ^{[1
]}

Robertson, John ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

TRANSITION-METAL OXIDES; ALPHA-MOO3; GRAPHENE; SURFACE; ELECTRODES; MOO3(010); ALIGNMENT;

D O I：

10.1063/1.4903538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The large work function of MoO3 of 6.6 eV is due to its closed shall character and the dipole layer created by planes of terminal O-1 oxygen sites which lower the electrostatic potential of the inner Mo-O units. These O-1 sites arise from the high stoichiometry of MoO3. The O vacancy is most stable at the 2-fold O-2 site. It is a shallow donor and has a small formation energy in the O poor limit so that MoO3 easily becomes a degenerate semiconductor. (C) 2014 AIP Publishing LLC.

引用

页数：4

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