Multicrystalline LLC-silicon thin film cells on glass

被引：4

作者：

Andrä, G ^{[1
]}

Bergmann, J ^{[1
]}

Ose, E ^{[1
]}

Schmidt, M ^{[1
]}

Sinh, ND ^{[1
]}

Falk, F ^{[1
]}

机构：

[1] Inst Phys Hochtechnol EV, Jena, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190849

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 pm were deposited on uncoated glass by Layered Laser Crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition chamber. A 400 nm thick seed layer simultaneously acting as transparent electrode was crystallized by scanning an Ar+-laser beam. Epitaxial thickening by applying repeated pulses of an KrF excimer laser was performed during further a-Si:H deposition. p(+)-p-n(+) cells with 3 mum thick absorber without. reflector and without antireflection coating showed V-OC = 425 mV, I-SC = 9.8 mA/cm(2), FF = 55%, and n = 2.3%.

引用

页码：1306 / 1309

页数：4

共 7 条

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