Device simulation of grain boundaries with oxide-silicon interface roughness in laser-crystallized polycrystalline silicon thin-film transistors

For laser-crystallized polycrystalline silicon thin-film transistors, the effect of grain boundaries with oxide-silicon interface roughness on the transistor characteristics has been analyzed using device simulation. When grain boundaries and interface roughness are considered simultaneously, degradation of the on-current caused by grain boundaries is reduced by the interface roughness because the electric field concentration increases the carrier density and improves the conductance.