Study of structural, optical and electrical parameters of ZnSe powder and thin films
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作者:
Shikha, Deep
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Sri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, IndiaSri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, India
Shikha, Deep
[1
]
Mehta, Vimal
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Sri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, IndiaSri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, India
Mehta, Vimal
[1
]
Sharma, Jeewan
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Sri Guru Granth Sahib Univ, Dept Nanotechnol, Fatehgarh Sahib 140407, IndiaSri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, India
Sharma, Jeewan
[2
]
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Chauhan, R. P.
[3
]
机构:
[1] Sri Guru Teg Bahadur Khalsa Coll, PG Dept Phys, Anandpur Sahib 140118, India
[2] Sri Guru Granth Sahib Univ, Dept Nanotechnol, Fatehgarh Sahib 140407, India
[3] Natl Inst Technol, Dept Phys, Kurukshetra 136119, Haryana, India
Nanocrystalline ZnSe powder and thin film forms have been synthesized via chemical bath deposition technique. The ZnSe thin films are deposited onto ultrasonically clean glass substrates in an aqueous alkaline medium using sodium selenosulphate as Se2- ion source. The ZnSe powder and thin film are characterized by structural, optical and electrical properties. It is confirmed from X-ray diffraction study that cubic phase is present in ZnSe thin film form with (111) as preferred orientation and hexagonal phase is present in ZnSe powder form with (100) as preferred orientation. Optical absorption measurement indicates the existence of direct allowed optical transition with a wide energy gap and blue shift in the fundamental edge has been observed in both cases. The optical band gap of ZnSe powder is greater than the thin film. The electrical conductivity (both dark and photoconductivity) measurements are also carried out in different temperature range and variation in activation energy has been calculated.