A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation

被引：1
|
作者：
Ma Zhongfa [1 ]
Zhang Peng [1 ]
Wu Yong [1 ]
Li Weihua [1 ]
Zhuang Yiqi [1 ]
Du Lei [1 ]
机构：
[1] Xidian Univ, Dept Microelect, Xian 710071, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 02期
关键词：
RANDOM TELEGRAPH NOISE; SIGNALS; VOLTAGE; MODEL;
D O I：
10.1016/j.microrel.2009.09.017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high efficiency 2D percolation model of RTS amplitudes in nanoscale MOSFETs based on the numerical results of potential and carriers density distributions in the channel obtained by solutions of coupled 2D Schrodinger and Poisson equations was presented. Using this model the dependences of relative RTS amplitudes Delta I-D/I-D on device geometry L-eff x W-eff, t(ox) bias conditions I-D, V-G and trap locations along the channel were simulated and analyzed for a set of square n-MOSFETs. The results show reasonable agreement with published numerical or experimental data. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：179 / 182
页数：4
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