Electrochemical breakdown in thin Nb2O5 films

被引:2
|
作者
Jouve, G [1 ]
机构
[1] Univ Paris Sud, URA CNRS 1107, Lab Met Struct, F-91405 Orsay, France
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 2000年 / 80卷 / 08期
关键词
D O I
10.1080/01418630050114709
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Observations are presented on breakdown during the galvanostatic growth of niobium pentoxide in acid medium. The role played by electrolyte parameters, such as acid concentration and transport through the solution of electron donor species, is examined. The intrinsic properties of the oxide film and a correlation between the inner film and its thickness are discussed with regard to impact ionization and the avalanche breakdown model. Experiments using electrochemical copper reduction on the surface of the film suggest that electronic conduction through filamentary high conduction paths is responsible for the localization of the observed breakdown spots.
引用
收藏
页码:1507 / 1515
页数:9
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