Achieving ultralow surface roughness and high material removal rate in fused silica via a novel acid SiO2 slurry and its chemical-mechanical polishing mechanism

被引:38
作者
Shi, Xiao-Lei [1 ,2 ,3 ]
Chen, Gaopan [1 ,4 ,5 ]
Xu, Li [1 ]
Kang, Chengxi [1 ]
Luo, Guihai [1 ,4 ,5 ]
Luo, Haimei [1 ,4 ,5 ]
Zhou, Yan [1 ,4 ,5 ]
Dargusch, Matthew S. [3 ]
Pan, Guoshun [1 ,4 ,5 ]
机构
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
[2] Univ Southern Queensland, Ctr Future Mat, Springfield, Qld 4300, Australia
[3] Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia
[4] Guangdong Prov Key Lab Optomechatron, Shenzhen 518057, Guangdong, Peoples R China
[5] Tsinghua Univ Shenzhen, Shenzhen Key Lab Micro Nano Mfg, Res Inst, Shenzhen 518057, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Fused silica; Chemical-mechanical polishing; Acid silica slurry; Material removal rate; Surface roughness; LASER-DAMAGE RESISTANCE; DIFFERENT SIZES; CEO2; NANOPARTICLES; WAFER; SPECTROSCOPY; PERFORMANCE; TOXICITY; QUARTZ; ABSORPTION;
D O I
10.1016/j.apsusc.2019.144041
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Fused silica is widely used as a substrate material in various optical precision devices, and its surface quality plays a significant role in determining the optical performance. However, it is difficult to achieve an ultra-smooth surface without obvious damage using traditional planarization techniques. In this work, we report on the simultaneous achievement of ultralow surface roughness of similar to 0.193 nm and high material removal rate of similar to 10.9 mu m h(-1) on a fused silica substrate via a novel acid SiO2 slurry. The results show an improvement of removal rate by similar to 900% compared to its alkaline counterpart. Comprehensive studies based on thermogravimetric analysis, infrared X-ray photoelectron spectroscopy, and nuclear magnetic resonance spectra reveal that phenolic hydroxyl in the acid SiO2 slurry plays a critical role in achieving high material removal rate during the chemical-mechanical polishing process, by well-distributing the SiO2 abrasives with an average size of only similar to 80 nm. This approach delivers the high surface quality. Evidence in support of this explanation has been obtained using advanced characterization techniques including scanning electron microscopy, atomic force microscopy, and optical interferometry profiling. This novel acid SiO2 slurry is also environmentally friendly with significantly higher durability and stability, which is especially suitable for industrial scale production.
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页数:8
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