Monte Carlo study of anisotropic hole velocity overshoot in sub-0.1 μm GaAs devices for complementary circuit applications

In order to evaluate tile high-speed and low-power performance of sub-0.1 mu m-sized GaAs devices used for complementary circuits, we studied full-band Monte! Carlo simulations of high field hole transport in bulk GaAs and one-dimensional p-i-p diodes. We found that the peak hole velocity under an electric field of 100 kV/cm reaches 2.2 x 10(7) cm/sec at room temperature, which is about three times higher than the steady-state drift, velocity. We also simulated anisotropic hole velocity overshoot effects anti demonstrated that the peak velocity with an electric field applied along the [100] direction is about 30% higher than in other. directions, Although the saturation velocities are almost, the same. In this paper, we discuss the hole velocity overshoot, affect on the characteristics of a nanometer-sized device, and present a similar anisotropic dependence, on the current drivability of 0.05 mu m p-i-p diodes.