Improving radiative recombination efficiency of green light-emitting diodes

被引:18
作者
Ding, Boning [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England
关键词
Light-emitting diodes; gallium nitride; green gap; efficiency droop; MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; A-PLANE GAN; STRUCTURAL-PROPERTIES; CARRIER LOCALIZATION; PHASE-SEPARATION; ROOM-TEMPERATURE; OPTICAL-EMISSION; GALLIUM NITRIDE; ZINCBLENDE GAN;
D O I
10.1080/02670836.2018.1461587
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Although the solid-state lighting industry has achieved huge successes in both red and blue part of the visible spectrum during the last 40 years, light-emitting diodes (LEDs) that emit green light consistently exhibit inferior efficiencies. Thanks to the use of down-conversion phosphors, white LEDs have been commercialised without using green LEDs. However, the efficiency problem of green LEDs still hinders many potential applications of solid-state lighting and limits the overall system efficiency. This review first attempts to conclude and comment on the complex factors that limit the performance of green LEDs with recent research progresses. Then the article focuses on reviewing various strategies to improve green light LED radiative recombination efficiencies.
引用
收藏
页码:1615 / 1630
页数:16
相关论文
共 117 条
[1]   InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop [J].
Alam, Saiful ;
Sundaram, Suresh ;
Elouneg-Jamroz, Miryam ;
Li, Xin ;
El Gmili, Youssef ;
Robin, Ivan Christophe ;
Voss, Paul L. ;
Salvestrini, Jean-Paul ;
Ougazzaden, Abdallah .
SUPERLATTICES AND MICROSTRUCTURES, 2017, 104 :291-297
[2]   Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J].
Arif, Ronald A. ;
Ee, Yik-Khoon ;
Tansu, Nelson .
APPLIED PHYSICS LETTERS, 2007, 91 (09)
[3]  
As DJ, 1998, PHYS STATUS SOLIDI B, V210, P445, DOI 10.1002/(SICI)1521-3951(199812)210:2<445::AID-PSSB445>3.0.CO
[4]  
2-P
[5]  
Auf der Maur M., 2015, 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry: Leveraging a Better Tomorrow (RTSI). Proceedings, P153, DOI 10.1109/RTSI.2015.7325088
[6]   Characterization of InGaN-based nanorod light emitting diodes with different indium compositions [J].
Bai, J. ;
Wang, Q. ;
Wang, T. .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
[7]   LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS [J].
BURROUGHES, JH ;
BRADLEY, DDC ;
BROWN, AR ;
MARKS, RN ;
MACKAY, K ;
FRIEND, RH ;
BURN, PL ;
HOLMES, AB .
NATURE, 1990, 347 (6293) :539-541
[8]   Microstructural origin of leakage current in GaN/InGaN light-emitting diodes [J].
Cao, XA ;
Teetsov, JA ;
Shahedipour-Sandvik, F ;
Arthur, SD .
JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :172-177
[9]   Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak [J].
Chakraborty, A ;
Haskell, BA ;
Keller, S ;
Speck, JS ;
DenBaars, SP ;
Nakamura, S ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2004, 85 (22) :5143-5145
[10]   High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes [J].
Chen, Liang-Yi ;
Huang, Ying-Yuan ;
Chang, Chun-Hsiang ;
Sun, Yu-Hsuan ;
Cheng, Yun-Wei ;
Ke, Min-Yung ;
Chen, Cheng-Pin ;
Huang, JianJang .
OPTICS EXPRESS, 2010, 18 (08) :7664-7669