The impact of subsurface damage on the fracture strength of diamond-wire-sawn monocrystalline silicon wafers

被引:24
|
作者
Sekhar, Halubai [1 ]
Fukuda, Tetsuo [1 ]
Tanahashi, Katsuto [1 ]
Shirasawa, Katsuhiko [1 ]
Takato, Hidetaka [1 ]
Ohkubo, Kazuya [2 ]
Ono, Hiromichi [3 ]
Sampei, Yoshiyuki [3 ]
Kobayashi, Tsubasa [3 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Fukushima Renewable Energy Inst, Renewable Energy Res Ctr, Koriyama, Fukushima 9630298, Japan
[2] Noritake Co Ltd, Kurume, Fukuoka 8391215, Japan
[3] Fukushima Tech Ctr, Koriyama, Fukushima 9630298, Japan
关键词
SOLAR-CELLS; RAMAN-SPECTROSCOPY; MECHANISMS;
D O I
10.7567/JJAP.57.08RB08
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe a multi-diamond-wire saw for cutting monocrystalline silicon bricks into thin (120 mu m) and thick (200 mu m) wafers and label as fresh-and worn-wire sides. While almost no difference was found in the fracture stress of the thick (200 mu m) wafers cut from either side, the thin (120 mu m) wafers showed a lower fracture stress in those from the fresh-wire side compared to the worn-wire side. This is a remarkable result when wafers are sawn with conventional diamond wire. On the contrary, wafers sawn with improved diamond wire (100d-M6/12) showed a higher fracture stress compared to those cut with conventional diamond wire (100d-M8/16), for both the fresh-and worn-wire sides. Observing the subsurface areas of wafers by micro-Raman spectroscopy, we succeeded in quantifying the defective silicon fraction as the Raman crystallinity factor (phi(c)). We found that wafers having a higher fracture strength had a larger phi(c). (C) 2018 The Japan Society of Applied Physics
引用
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页数:5
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