Plasma-enhanced reactive linear sputtering source for formation of silicon-based thin films

被引：4

作者：

Takenaka, Kosuke ^{[1
]}

Setsuhara, Yuichi ^{[1
]}

Han, Jeon Geon ^{[2
]}

Uchida, Giichiro ^{[1
]}

Ebe, Akinori ^{[3
]}

机构：

[1] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

[2] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 440746, South Korea

[3] EMD Corp, 2426-1 Mikami, Yasu, Shiga 5202323, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2018年 / 89卷 / 08期

关键词：

LOW-INDUCTANCE ANTENNA; CHEMICAL-VAPOR-DEPOSITION; SOLAR-CELL APPLICATION; GLOW-DISCHARGE PLASMA; C-SI-H; MICROCRYSTALLINE SILICON; LARGE-AREA; ELECTRICAL-PROPERTIES; PHYSICAL-PROPERTIES; LOW-PRESSURE;

D O I：

10.1063/1.5037408

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this study, an inductively coupled plasma (ICP)-enhanced reactive sputter deposition system with a rectangular target was developed as a linear plasma source for roll-to-roll deposition processes. The longitudinal distribution of the film thickness indicated the feasibility of uniformity control via the control of the power deposition profile of the assisted ICPs. The characteristics of Si films were investigated in terms of the film thickness uniformity and film crystallinity. The results of Raman and X-ray diffraction measurements indicated the crystallization of the Si film with a crystallinity as high as 73%-78% in all the samples of the longitudinal position. Published by AIP Publishing.

引用

页数：6

共 43 条

[1] Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition [J].

Alpuim, P ;

Chu, V ;

Conde, JP .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3812-3821

[2] Effects of antenna size and configurations in large-area RF plasma production with internal low-inductance antenna units [J].

Deguchi, Hiroshige ;

Yoneda, Hitoshi ;

Kato, Kenji ;

Kubota, Kiyoshi ;

Hayashi, Tsukasa ;

Ogata, Kiyoshi ;

Ebe, Akinori ;

Takenaka, Kosuke ;

Setsuhara, Yuichi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10B) :8042-8045

[3] Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films [J].

Dergez, D. ;

Schneider, M. ;

Bittner, A. ;

Schmid, U. .

THIN SOLID FILMS, 2015, 589 :227-232

[4] Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells [J].

Droz, C ;

Vallat-Sauvain, E ;

Bailat, J ;

Feitknecht, L ;

Meier, J ;

Shah, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 81 (01) :61-71

[5] Real-time spectroscopic ellipsometry studies of the nucleation and grain growth processes in microcrystalline silicon thin films [J].

Fujiwara, H ;

Kondo, M ;

Matsuda, A .

PHYSICAL REVIEW B, 2001, 63 (11)

[6] Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering [J].

Gonçalves, C ;

Charvet, S ;

Zeinert, A ;

Clin, M ;

Zellama, K .

THIN SOLID FILMS, 2002, 403 :91-96

[7] Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 [J].

Greene, J. E. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (05)

[8] Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition [J].

Han, DX ;

Wang, KD ;

Owens, JM ;

Gedvilas, L ;

Nelson, B ;

Habuchi, H ;

Tanaka, M .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :3776-3783

[9] GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

HARBEKE, G ;

KRAUSBAUER, L ;

STEIGMEIER, EF ;

WIDMER, AE ;

KAPPERT, HF ;

NEUGEBAUER, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :675-682

[10] Investigations on Microcrystalline Silicon Films for Solar Cell Application [J].

Hwang, Hae-Sook ;

Park, Min Gyu ;

Ruh, Hyun ;

Yu, Hyunung .

BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2010, 31 (10) :2909-2912

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