The effect of oxygen pressure on the dielectric properties of pulsed laser deposited La-doped PbTiO3 thin film

被引：0

作者：

Hu, DZ ^{[1
]}

Shen, MR ^{[1
]}

机构：

[1] Suzhou Univ, Dept Phys, Key Lab Thin Solid Films Jiangsu Prov, Suzhou 215006, Peoples R China

来源：

ACTA PHYSICA SINICA | 2004年 / 53卷 / 12期

关键词：

pulsed laser deposition; thin film; pressure; dielectric enhancement;

D O I：

10.7498/aps.53.4405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pb0.72La0.28TiO3(PLT28) thin films have been prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under various oxygen pressure. Experimental study indicated that the oxygen pressure exerts a strong impact on the microstructure and the dielectric properties of the thin films. The film deposited under an oxygen pressure of 2 Pa had a larger dielectric constant and kept a low dielectric loss. At 10 kHz frequency, the dielectric constant was approximately 852 and the dielectric loss was 0.0110. Meanwhile, we found that other La-modified PbTiO3 films have the same relation between dielectric constant and pressure as the above. Possible explanation is given for this.

引用

页码：4405 / 4409

页数：5

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