Anharmonic decay of non-equilibrium intervalley phonons in silicon

被引:10
作者
Aksamija, Zlatan [1 ]
Ravaioli, Umberto [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源
16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷
基金
美国国家科学基金会;
关键词
THERMAL-CONDUCTIVITY; TRANSPORT; SEMICONDUCTORS; MODEL;
D O I
10.1088/1742-6596/193/1/012033
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We study phonons produced by transitions between the equivalent X valleys in silicon. We use the Monte Carlo method first to select stochastically the time between phonon collisions, and then to select a final-state pair of phonons from the probability distribution for anharmonic decay. Our results show that intervalley phonons decay into one near-equilibrium transverse acoustic phonon and another intermediate longitudinal phonon either on the acoustic or optical branch. This second phonon has energies between 40 and 50 meV and undergoes another decay before turning into a pair of near-equilibrium transverse acoustic phonons, presenting an additional potential bottleneck.
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页数:4
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