High Power X-band Internally-matched AlGaN/GaN HEMT

被引：0

作者：

Wang, Y. ^{[1
]}

Zhang, Z. G. ^{[1
]}

Feng, Z. ^{[1
]}

Li, J. Q. ^{[1
]}

Song, J. B. ^{[1
]}

Feng, Z. H. ^{[1
]}

Cai, S. J. ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Shijiazhuang, Peoples R China

来源：

APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | 2008年

关键词：

GaN HEMT; Internal matching; High power;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance internally-matched GaN HEMT with 0.3 mu m gate length and 4x2.5mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8GHz. A maximum output power of 64.5W, a gain of 7.2dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.

引用

页码：2091 / 2093

页数：3