Metal-insulator transition in epitaxial V1-xWxO2(0<x<0.33) thin films

被引：187

作者：

Shibuya, Keisuke ^{[1
]}

Kawasaki, Masashi ^{[1
,2
]}

Tokura, Yoshinori ^{[1
,3
,4
]}

机构：

[1] RIKEN, Adv Sci Inst, CMRG, Wako, Saitama 3510198, Japan

[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[4] Japan Sci & Technol Agcy JST, ERATO, Multiferro Project, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

doping; epitaxial layers; ground states; metal-insulator transition; phase diagrams; phase separation; tungsten; vanadium compounds; MOTT-HUBBARD; VO2; TEMPERATURE; V1-XWXO2; PEIERLS; VIEW;

D O I：

10.1063/1.3291053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated epitaxial V1-xWxO2(0 < x < 0.33) thin films on TiO2 (001) substrates. The metal-insulator transition temperature of VO2 is systematically reduced by W doping, and eventually a metallic ground state is realized at 0.08 < x < 0.09. Tiny resistivity upturn around 50 K observed for these films suggests an electronic phase separation between a majority metallic matrix and minority insulating puddles. With further increasing x above 0.095, another insulating phase appears while increasing the metal-insulator transition temperature. The elucidated phase diagram gives basic knowledge for devices based on Mott transition.

引用

页数：3

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Metal-insulator transition in epitaxial V1-xWxO2(0&lt;x&lt;0.33) thin films

Metal-insulator transition in epitaxial V1-xWxO2(0<x<0.33) thin films