Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrospinning one-dimensional (1-D) semiconductor nanofibers have been regarded as one of the most promising building blocks for future nanoelectronics with high performance because they can exhibit a broad range of device functions. However, electronic devices based on electrospinning-driven nanofibers often suffer frompoor performance and inferior quality. In currentworks, continuous and uniform high-quality indium oxide (In2O3) nanofibers were obtained by electrospinning. The surface morphology, crystallinity, optical, and electrical properties of the In2O3 nanofibers were investigated by X-ray diffraction, scanning electron microscopy, optical spectroscopy, and electrical measurements. It has been detected that the field-effect transistors (FETs) with optimized electrospinning time of 30 s demonstrated superior electrical performance, including a high field-effect mobility (mu FE) of 9.1 cm(2).V-1.s(-1) and a large I-ON/I-OFF of 107. The high-k Al2O3 dielectric layer has also been used to greatly reduce the operating voltage (from 30 to 3 V), significantly improve mu FE (to 27.7 cm(2).V-1.s(-1)), and strengthen stability over cycling. To prove the device's potential in more complex logic circuit applications, a resistor-loaded inverter was further integrated, and themaximumvoltage gain of 9.8 was demonstrated at an ultralow operating voltage of 3 V. The present findings have demonstrated that electrospinning can potentially be used as a straightforward and costeffective means for the assembly of 1-D nanostructures for use in next-generation low-power devices.