Computer Simulation of Edge Effects in a Small-Area Mesa N-P Junction Diode

被引：0

作者：

Appel, Jesse ^{[1
]}

Sopori, Bhushan ^{[1
]}

Ravindra, N. M. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] New Jersey Inst Technol, Newark, NJ 07102 USA

来源：

PHOTOVOLTAIC MATERIALS AND MANUFACTURING ISSUES | 2009年 / 1123卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n(+)/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer Simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

引用

页码：125 / +

页数：2

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