Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy

被引：6

作者：

Yoshino, K

Yoneta, M

Saito, H

Ohishi, M

Chan, LH

Abe, T

Ando, K

Ikari, T

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan

[3] Tottori Univ, Dept Elect & Elect Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnSe; MBE; photoacoustic; photoluminescence;

D O I：

10.1016/S0022-0248(00)00154-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence (PL) and piezoelectric photoacoustic (PPA) spectra have been studied at low temperatures for nondoped and N-doped ZnSe epitaxial layers grown by molecular beam epitaxy. Deep emission bands observed in nondoped ZnSe are disappeared with nitrogen doping in the PL spectra. On the other hand, new nonradiative signals appear with nitrogen doping in the PPA spectra. This indicated that nonradiative carrier recombination centers are introduced by the nitrogen doping process in molecular beam epitaxy growth. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：572 / 575

页数：4

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