Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy

被引：6
|
作者：
Yoshino, K
Yoneta, M
Saito, H
Ohishi, M
Chan, LH
Abe, T
Ando, K
Ikari, T
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan
[3] Tottori Univ, Dept Elect & Elect Engn, Tottori 6808552, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷
关键词：
ZnSe; MBE; photoacoustic; photoluminescence;
D O I：
10.1016/S0022-0248(00)00154-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence (PL) and piezoelectric photoacoustic (PPA) spectra have been studied at low temperatures for nondoped and N-doped ZnSe epitaxial layers grown by molecular beam epitaxy. Deep emission bands observed in nondoped ZnSe are disappeared with nitrogen doping in the PL spectra. On the other hand, new nonradiative signals appear with nitrogen doping in the PPA spectra. This indicated that nonradiative carrier recombination centers are introduced by the nitrogen doping process in molecular beam epitaxy growth. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：572 / 575
页数：4
相关论文
共 50 条
  • [31] STRUCTURAL-PROPERTIES OF NITROGEN-DOPED ZNSE EPITAXIAL LAYERS GROWN BY MBE
    PETRUZZELLO, J
    GAINES, J
    VANDERSLUIS, P
    OLEGO, D
    MARSHALL, T
    PONZONI, C
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 453 - 456
  • [32] Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
    Buyanova, IA
    Chen, WM
    Monemar, B
    Xin, HP
    Tu, CW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 166 - 169
  • [33] Laser excitation induced photoluminescence linewidth reduction in molecular beam epitaxial InAlAs layers grown on InP substrates
    Yoon, SF
    Radhakrishnan, K
    Du, QH
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (02) : 503 - 512
  • [34] Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy
    Zheng, HQ
    Radhakrishnan, K
    Wang, H
    Zhang, PH
    Yoon, SF
    Ng, GI
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (04) : 762 - 768
  • [35] Study of ZnCdSe/ZnSe quantum-wells grown by molecular-beam epitaxy on ZnSe substrates
    Kozlovsky, VI
    Trubenko, PA
    Dianov, EM
    Korostelin, YV
    Krysa, AB
    Shapkin, PV
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 872 - 876
  • [36] In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy
    Fan, Zongjian
    Bunk, Ryan
    Wang, Guangying
    Woodall, Jerry M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (04):
  • [37] Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxy
    Yamagata, Y
    Sawada, T
    Imai, K
    Suzuki, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 623 - 626
  • [38] The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy
    Ruterana, P
    Vermaut, P
    Potin, V
    Nouet, G
    Botchkarev, A
    Salvador, A
    Morkoc, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 72 - 75
  • [39] Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy
    Morishima, S
    Maruyama, T
    Akimoto, K
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 378 - 381
  • [40] PLANAR-DOPING OF MOLECULAR-BEAM EPITAXY GROWN ZNSE WITH PLASMA-EXCITED NITROGEN
    MATSUMOTO, S
    TOSAKA, H
    YOSHIDA, T
    KOBAYASHI, M
    YOSHIKAWA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L229 - L232
12345