Topological electronic effects in exfoliated thin films of bismuth telluride

被引：4

作者：

Hermanowicz, M. ^{[1
]}

Radny, M. W. ^{[1
,2
]}

机构：

[1] Poznan Univ Tech, Inst Phys, Piotrowo 3, PL-60965 Poznan, Poland

[2] Univ Newcastle, Sch Math & Phys Sci, Callaghan, NSW 2308, Australia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 09期

关键词：

Bi2Te3; bismuth telluride; electronic band structure; surface states; topological insulators; SINGLE DIRAC CONE; SURFACE-STATES; BI2SE3; INSULATORS; BI2TE3; SCALE;

D O I：

10.1002/pssb.201700086

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An important aspect of band gap engineering in 2D thin films of topological insulators is determining their surface electronic properties at various atomic terminations. In this work, the electronic structure evolution of thin films of bismuth telluride (Bi2Te3) with varying surface termination is discussed based on density functional theory. The reported electronic effects include closure of the hybridization energy band gap and distinct spatial charge localization of topological surface states on two types of defected surfaces - Te and Bi-terminated. The observed band gap value changes periodically every five monolayers following the quintuple-based layered structure. The studied system shares, to a large extent, the main features with thin films of bismuth selenide (Bi2Se3), although with a stronger size effect. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6

共 33 条

[1] Exceptional surface states and topological order in Bi2Se3 [J].

Biswas, Deepnarayan ;

Maiti, Kalobaran .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2016, 208 :90-94

[2] Large-scale ab initio calculations based on three levels of parallelization [J].

Bottin, Francois ;

Leroux, Stephane ;

Knyazev, Andrew ;

Zerah, Gilles .

COMPUTATIONAL MATERIALS SCIENCE, 2008, 42 (02) :329-336

[3] Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi2Te3 [J].

Coelho, Paula M. ;

Ribeiro, Guilherme A. S. ;

Malachias, Angelo ;

Pimentel, Vinicius L. ;

Silva, Wendell S. ;

Reis, Diogo D. ;

Mazzoni, Mario S. C. ;

Magalhaes-Paniago, Rogerio .

NANO LETTERS, 2013, 13 (09) :4517-4521

[4] Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface x-ray diffraction [J].

dos Reis, Diogo Duarte ;

Barreto, Lucas ;

Bianchi, Marco ;

Silva Ribeiro, Guilherme Almeida ;

Soares, Edmar Avellar ;

Simoes e Silva, Wendell ;

de Carvalho, Vagner Eustaquio ;

Rawle, Jonathan ;

Hoesch, Moritz ;

Nicklin, Chris ;

Fernandes, Willians Principe ;

Mi, Jianli ;

Iversen, Bo Brummerstedt ;

Hofmann, Philip .

PHYSICAL REVIEW B, 2013, 88 (04)

[5] Stability and Surface Reconstruction of Topological Insulator Bi2Se3 on Exposure to Atmosphere [J].

Edmonds, Mark T. ;

Hellerstedt, Jack T. ;

Tadich, Anton ;

Schenk, Alex ;

O'Donnell, Kane Michael ;

Tosado, Jacob ;

Butch, Nicholas P. ;

Syers, Paul ;

Paglione, Johnpierre ;

Fuhrer, Michael S. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (35) :20413-20419

[6] Termination-dependent topological surface states of the natural superlattice phase Bi4Se3 [J].

Gibson, Q. D. ;

Schoop, L. M. ;

Weber, A. P. ;

Ji, Huiwen ;

Nadj-Perge, S. ;

Drozdov, I. K. ;

Beidenkopf, H. ;

Sadowski, J. T. ;

Fedorov, A. ;

Yazdani, A. ;

Valla, T. ;

Cava, R. J. .

PHYSICAL REVIEW B, 2013, 88 (08)

[7] Fast radix 2, 3, 4, and 5 kernels for fast Fourier transformations on computers with overlapping multiply-add instructions [J].

Goedecker, S .

SIAM JOURNAL ON SCIENTIFIC COMPUTING, 1997, 18 (06) :1605-1611

[8] A brief introduction to the ABINIT software package [J].

Gonze, X ;

Rignanese, GM ;

Verstraete, M ;

Beuken, JM ;

Pouillon, Y ;

Caracas, R ;

Jollet, F ;

Torrent, M ;

Zerah, G ;

Mikami, M ;

Ghosez, P ;

Veithen, M ;

Raty, JY ;

Olevano, V ;

Bruneval, F ;

Reining, L ;

Godby, R ;

Onida, G ;

Hamann, DR ;

Allan, DC .

ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (5-6) :558-562

[9] ABINIT: First-principles approach to material and nanosystem properties [J].

Gonze, X. ;

Amadon, B. ;

Anglade, P. -M. ;

Beuken, J. -M. ;

Bottin, F. ;

Boulanger, P. ;

Bruneval, F. ;

Caliste, D. ;

Caracas, R. ;

Cote, M. ;

Deutsch, T. ;

Genovese, L. ;

Ghosez, Ph. ;

Giantomassi, M. ;

Goedecker, S. ;

Hamann, D. R. ;

Hermet, P. ;

Jollet, F. ;

Jomard, G. ;

Leroux, S. ;

Mancini, M. ;

Mazevet, S. ;

Oliveira, M. J. T. ;

Onida, G. ;

Pouillon, Y. ;

Rangel, T. ;

Rignanese, G. -M. ;

Sangalli, D. ;

Shaltaf, R. ;

Torrent, M. ;

Verstraete, M. J. ;

Zerah, G. ;

Zwanziger, J. W. .

COMPUTER PHYSICS COMMUNICATIONS, 2009, 180 (12) :2582-2615

[10] First-principles computation of material properties: the ABINIT software project [J].

Gonze, X ;

Beuken, JM ;

Caracas, R ;

Detraux, F ;

Fuchs, M ;

Rignanese, GM ;

Sindic, L ;

Verstraete, M ;

Zerah, G ;

Jollet, F ;

Torrent, M ;

Roy, A ;

Mikami, M ;

Ghosez, P ;

Raty, JY ;

Allan, DC .

COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :478-492

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