Epitaxial graphene contact electrode for silicon carbide based ultraviolet photodetector

被引:51
作者
Kusdemir, Erdi [1 ]
Ozkendir, Dilce [1 ]
Firat, Volkan [1 ]
Celebi, Cem [1 ]
机构
[1] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey
关键词
epitaxial graphene; transparent electrode; 4H-SiC; UV photodetector; TRANSPARENT ELECTRODES; MSM PHOTODETECTORS; SCHOTTKY; PERFORMANCE; DIODES; GROWTH;
D O I
10.1088/0022-3727/48/9/095104
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and SiC semiconductor. As-grown single layer epitaxial graphene is interdigitated as transparent conductive electrode to probe photo-generated charge carriers in a semi-insulating 4H-SiC substrate. The fabricated device exhibits the typical current-voltage characteristics of a conventional metal-semiconductor-metal type photodetector with low leakage current. Time-resolved photocurrent measurements suggest an excellent photocurrent reversibility and high response speed of the device. The measurements performed for different illumination wavelengths showed that the sample reveals higher responsivity values when it is exposed to the light with 254 nm wavelength. The obtained results imply that epitaxial graphene can be used readily as transparent conductive electrode for SiC based optoelectronic device applications.
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页数:6
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