Three-Dimensional Control of Self-Assembled Quantum Dot Configurations

被引：27

作者：

Yakes, Michael K. ^{[1
]}

Cress, Cory D. ^{[1
]}

Tischler, Joseph G. ^{[1
]}

Bracker, Allan S. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ACS NANO | 2010年 / 4卷 / 07期

关键词：

quantum dot; photoluminescence; nucleation; droplet epitaxy; molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; INAS ISLANDS; GAAS; GROWTH; NANOHOLES;

D O I：

10.1021/nn100623q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate techniques for growing three-dimensional quantum dot configurations using molecular beam epitaxy on faceted template islands. Molecular beam shadowing leads to new geometries through selective nucleation of the dots on the template edges. Strain-induced stacking converts the planar configurations into three-dimensional structures. The resulting dot morphologies and their configurational uniformity are studied using cross sectional scanning tunneling microscopy and atomic force microscopy. Combining photoluminescence measurements with structural characterization allows interpretation of the ensemble photoluminescence spectrum. Bright spectra for the three-dimensional structures suggest an improved method for combining lithographic nucleation sites with self-assembled dot growth. These techniques can be applied to lithographic templates to fabricate complex quantum dot networks.

引用

收藏

页码：3877 / 3882

页数：6

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