Charge state control and relaxation in an atomically doped silicon device

被引:48
作者
Andresen, Seren E. S. [1 ]
Brenner, Rolf
Wellard, Cameron J.
Yang, Changyi
Hopf, Toby
Escott, Christopher C.
Clark, Robert G.
Dzurak, Andrew S.
Jamieson, David N.
Hollenberg, Lloyd C. L.
机构
[1] Univ New S Wales, Australian Res Council Ctr Excellence Quantum Com, Sydney, NSW 2052, Australia
[2] Univ Melbourne, Australian Res Council Ctr Excellence Quantum Com, Melbourne, Vic 3010, Australia
关键词
D O I
10.1021/nl070797t
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate time-resolved control and detection of single-electron transfers in a silicon device implanted with exactly two phosphorus donors. Charge state relaxation at millikelvin temperature is shown to be dominated by phonon emission and background charge fluctuations for low energies, while higher-order processes take over at higher energies. Our results reveal relaxation times for single-donor charge states of several milliseconds, which have significant implications for single-atom nanoelectronics.
引用
收藏
页码:2000 / 2003
页数:4
相关论文
共 28 条
  • [11] Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions
    Jamieson, DN
    Yang, C
    Hopf, T
    Hearne, SM
    Pakes, CI
    Prawer, S
    Mitic, M
    Gauja, E
    Andresen, SE
    Hudson, FE
    Dzurak, AS
    Clark, RG
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
  • [12] A silicon-based nuclear spin quantum computer
    Kane, BE
    [J]. NATURE, 1998, 393 (6681) : 133 - 137
  • [13] Driven coherent oscillations of a single electron spin in a quantum dot
    Koppens, F. H. L.
    Buizert, C.
    Tielrooij, K. J.
    Vink, I. T.
    Nowack, K. C.
    Meunier, T.
    Kouwenhoven, L. P.
    Vandersypen, L. M. K.
    [J]. NATURE, 2006, 442 (7104) : 766 - 771
  • [14] Modelling single electron transfer in Si:P double quantum dots
    Lee, KH
    Greentree, AD
    Dinale, JP
    Escott, CC
    Dzurak, AS
    Clark, RG
    [J]. NANOTECHNOLOGY, 2005, 16 (01) : 74 - 81
  • [15] Single-electron devices and their applications
    Likharev, KK
    [J]. PROCEEDINGS OF THE IEEE, 1999, 87 (04) : 606 - 632
  • [16] Single atom Si nanoelectronics using controlled single-ion implantation
    Mitic, M
    Andresen, SE
    Yang, C
    Hopf, T
    Chan, V
    Gauja, E
    Hudson, FE
    Buehler, TM
    Brenner, R
    Ferguson, AJ
    Pakes, CI
    Hearne, SM
    Tamanyan, G
    Reilly, DJ
    Hamilton, AR
    Jamieson, DN
    Dzurak, AS
    Clark, RG
    [J]. MICROELECTRONIC ENGINEERING, 2005, 78-79 : 279 - 286
  • [17] Coherent manipulation of coupled electron spins in semiconductor quantum dots
    Petta, JR
    Johnson, AC
    Taylor, JM
    Laird, EA
    Yacoby, A
    Lukin, MD
    Marcus, CM
    Hanson, MP
    Gossard, AC
    [J]. SCIENCE, 2005, 309 (5744) : 2180 - 2184
  • [18] Manipulation of a single charge in a double quantum dot
    Petta, JR
    Johnson, AC
    Marcus, CM
    Hanson, MP
    Gossard, AC
    [J]. PHYSICAL REVIEW LETTERS, 2004, 93 (18) : 186802 - 1
  • [19] MOS INTERFACE STATES - OVERVIEW AND PHYSICOCHEMICAL PERSPECTIVE
    POINDEXTER, EH
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 961 - 969
  • [20] RALLS KS, 1984, PHYS REV LETT, V52, P231