Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

被引：92

作者：

Kikuchi, Yutomo ^{[1
]}

Nomura, Kenji ^{[2
]}

Yanagi, Hiroshi ^{[3
]}

Kamiya, Toshio ^{[1
,2
]}

Hirano, Masahiro ^{[2
]}

Hosono, Hideo ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] JST, ERATO SORST, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 11期

关键词：

Thin-film transistor; Amorphous oxide semiconductor; a-IGZO; Low-temperature annealing; ELECTRONIC-STRUCTURE; HIGH-MOBILITY;

D O I：

10.1016/j.tsf.2009.10.132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-temperature process to improve performances of a-In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated at room temperature was examined Two deposition methods, pulsed laser deposition (PLD) and RF magnetron sputtering were employed to deposit the a-IGZO channels For the PLO case, the TFT characteristics were improved significantly by wet annealing at dew point (d p) of 50 degrees C at the annealing temperature of 200 degrees C For the sputtered TFTs, a wider range of annealing temperature from 100 to 200 degrees C was examined. It was found that annealing at >= 150 degrees C improved the TFT characteristics when dry annealing was employed On the other hand, wet annealing also improved mu(sat) and S values, but very large negative threshold voltage (V-th) shift was observed These results indicate that the annealing at 150 degrees C is enough to obtain mobility (mu(sat)) as large as 8 cm(2) Vs(-1), but annealing temperature as high as 200 degrees C provides larger mu(sat) comparable to those obtained by 400 degrees C annealing It is speculated that the large negative V-th shift originates from compensated donors in as-deposited sputtered films (C) 2009 Published by Elsevier B V

引用

页码：3017 / 3021

页数：5

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