AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

被引：25

作者：

Gerbedoen, Jean-Claude ^{[1
]}

Soltani, Ali ^{[1
]}

Joblot, Sylvain ^{[2
,3
]}

De Jaeger, Jean-Claude ^{[1
]}

Gaquiere, Christophe ^{[1
]}

Cordier, Yvon ^{[2
]}

Semond, Fabrice ^{[2
]}

机构：

[1] CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[2] CRHEA CNRS, F-06560 Valbonne, France

[3] STMicroelect, F-38926 Crolles, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 07期

关键词：

AlGaN/GaN; High Electron Mobility Transistor (HEMT); microwave power; (001) Si; ELECTRON-MOBILITY; SI(111);

D O I：

10.1109/TED.2010.2048792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN High Electron Mobility Transistors (HEMT) on a (001)-oriented silicon (Si) substrate are fabricated. The device with a gate length of 300 nm and a total gate periphery of 300 mu m exhibits a maximum dc drain current density of 600 mA/mm at V-GS = 0 V with an extrinsic transconductance (gm) of about 200 mS/mm. An extrinsic current gain cutoff frequency (f(T)) of 37 GHz and a maximum oscillation frequency (f(max)) of 55 GHz are deduced from S-parameter measurements. At 10 GHz, an output power density of 2.9 W/mm associated to a power-added efficiency (PAE) of 20% and a linear gain of 7 dB are obtained at V-DS = 30 V and V-GS = -2 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on (001) Si substrate.

引用

页码：1497 / 1503

页数：7

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