Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization
被引:12
作者:
Adams, D
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h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Adams, D
Malgas, GF
论文数: 0引用数: 0
h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Malgas, GF
Theodore, ND
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h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Theodore, ND
Gregory, R
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h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Gregory, R
Kim, HC
论文数: 0引用数: 0
h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Kim, HC
Misra, E
论文数: 0引用数: 0
h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Misra, E
Alford, TL
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h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Alford, TL
Mayer, JW
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h-index: 0
机构:Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
Mayer, JW
机构:
[1] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
[2] Motorola Inc, Digital DNA Labs, Tempe, AZ 85284 USA
[3] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
2004年
/
22卷
/
05期
基金:
美国国家科学基金会;
新加坡国家研究基金会;
关键词:
D O I:
10.1116/1.1787521
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Tantalum nitride films on silicon were prepared by reactive sputtering of Ta under nitrogen partial 4 flow rates varying from 15% to 40% N-2. Rutherford backscattering spectroscopy (RBS) and x-ray diffraction (XRD) analysis revealed that the composition and phases of the Ta-N films were influenced by the N2 flow rate. Increasing the nitrogen partial flow rate from 25% to 40% N-2, results in the films changing from metal-rich to stoichiometric Ta-nitride. High N-2 flow rates (30%-40% N-2) resulted in a disordered tantalum-nitride. The tantalum nitride films were evaluated as potential diffusion barriers for Ag metallization. Sheet resistance measurements, XRD and RBS analysis confirmed that Ta-N films, used as diffusion barriers in the Ag/Ta-N/Si system, were thermally stable up to 650 degreesC when annealed for 30 min in vacuum. The thermal stability was independent of N-2, flow rate within this temperature range. However, at 700 degreesC, the barrier failed as a result of Ta-silicide formation by reaction with the underlying Si substrate, and dewetting of Ag on Ta-N occurred. (C) 2004 American Vacuum Society.
机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
Alford, TL
Chen, LH
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机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
Chen, LH
Gadre, KS
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h-index: 0
机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
Alford, TL
Chen, LH
论文数: 0引用数: 0
h-index: 0
机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
Chen, LH
Gadre, KS
论文数: 0引用数: 0
h-index: 0
机构:
Arizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USAArizona State Univ, Ctr Low Power Elect, Dept Chem & Mat Engn, Tempe, AZ 85287 USA