Line Width Roughness Accuracy Analysis during Pattern Transfer in Self-aligned Quadruple Patterning Process

被引：15

作者：

Lorusso, Gian Francesco ^{[1
]}

Inoue, Osamu ^{[2
]}

Ohashi, Takeyoshi ^{[3
]}

Sanchez, Efrain Altamirano ^{[1
]}

Constantoudis, Vassilios ^{[4
,5
]}

Koshihara, Shunsuke ^{[3
]}

机构：

[1] IMEC, Kapedreef 75, B-3001 Leuven, Belgium

[2] Hitachi High Tenchnol Corp, Minato Ku, Tokyo 1058717, Japan

[3] Hitachi Ltd, Kokubunji, Tokyo 1858601, Japan

[4] Inst Nanosci & Nanotechnol NCSR Demokritos, Aghia Paraskevi 15310, Greece

[5] Nanometrisis PC, Aghia Paraskevi 15310, Greece

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX | 2016年 / 9778卷

关键词：

Lithography; SAQP; LER; LWR; frequency; wiggling;

D O I：

10.1117/12.2218863

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Line edge roughness (LER) and line width roughness (LWR) are analyzed during pattern transfer in a self-aligned quadruple patterning (SAQP) process. This patterning process leads to a final pitch of 22.5nm, relevant for N7/N5 technologies. Measurements performed by CD SEM (Critical Dimension Scanning Electron Microscope) using different settings in terms of averaging, field of view, and pixel size are compared with reference metrology performed by planar TEM and three-Dimensional Atomic Force Microscope (3D AFM) for each patterning process step in order to investigate the optimal condition for an in-line LWR characterization. Pattern wiggling is also quantitatively analyzed during LER/LWR transfer in the SAQP process.

引用

页数：8

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