Effects of Indium-Tin Oxide Film Morphologies on Light-Output Characteristics of GaN-Based Light-Emitting Diodes

被引：3

作者：

Shen, Yan ^{[1
,2
]}

Xu, Xiangang ^{[1
,2
]}

Liu, Qing ^{[2
]}

Zuo, Zhiyuan ^{[2
]}

Liu, Huan ^{[2
]}

Zhang, Muqing ^{[2
]}

Hu, Xiaobo ^{[1
,2
]}

机构：

[1] Shandong Univ, State Key Laboratoty Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Huaguang Optoelect Co Ltd, Jinan 250101, Peoples R China

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2014年 / 9卷 / 04期

关键词：

Nanorod; Cellular Particle; Nanotree Cluster; Grain Cluster; Indium-Tin Oxide Film; Light-Emitting Diodes; EXTRACTION; EFFICIENCY;

D O I：

10.1166/jno.2014.1624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ITO film surfaces need to be optimized since more optical power is extracted through roughened surfaces. In this study, ITO films with different morphologies were prepared under different evaporation conditions: by adjusting the oxygen flow rate during evaporation, ITO nanorods, cellular particles, nanotree clusters, and grain clusters were obtained. Surface morphologies and roughness were characterized by scanning electron microscopy, atomic force microscopy and confocal scanning laser microscopy. The current voltage curves and light-output power of the LEDs under different injection currents were measured.

引用

页码：549 / 553

页数：5

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