A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

被引：98

作者：

Degraeve, R ^{[1
]}

Ogier, JL ^{[1
]}

Bellens, R ^{[1
]}

Roussel, PJ ^{[1
]}

Groeseneken, G ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 02期

关键词：

D O I：

10.1109/16.658683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The field acceleration of intrinsic and extrinsic breakdown is studied. For the intrinsic mode an exp (1/E)- acceleration law is found, while for the extrinsic mode an new exp (E)-acceleration law for Q(BD) is proposed. This field acceleration model is implemented in a maximum likelihood algorithm together with a new analytical expression for fitting competing Weibull distributions. With this algorithm an extensive T-BD-data set measured at different stress conditions can be fitted excellently in one single calculation. From the result, predictions of low-field oxide reliability are made and the screening conditions in order to guarantee a pre-set reliability specification are calculated.

引用

页码：472 / 481

页数：10

共 21 条

[1]

APTE PP, 1994, P IRPS, P136

[2] A MODEL FOR SILICON-OXIDE BREAKDOWN UNDER HIGH-FIELD AND CURRENT STRESS [J].