Low-voltage solid electrolyte-gated OFETs for gas sensing applications

被引：11
作者：
Dumitru, Liviu Mihai [1 ]
Manoli, Kyriaki [1 ]
Magliulo, Maria [1 ]
Palazzo, Gerardo [1 ]
Torsi, Luisa [1 ]
机构：
[1] Aldo Moro Univ, Dept Chem, I-70126 Bari, Italy
来源：
MICROELECTRONICS JOURNAL | 2014年 / 45卷 / 12期
关键词：
Polyelectrolytes; Electrolyte-gated organic thin-film transistors; Low-voltage; Flexible substrates; Gas sensing; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; ELECTRICAL CHARACTERISTICS; ORGANIC TRANSISTORS; DIELECTRICS; DISPLAYS; SENSORS;
D O I：
10.1016/j.mejo.2014.05.017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b] thiophene) (pBTTT-C14) organic semiconductor (OSC). Different device configurations were evaluated and a bottom gate - top contact (BGTC) device was investigated as transducer for gas sensing measurements. The sensors' performance in terms of stability, repeatability and reproducibility were evaluated when the device was exposed to different concentrations of 1-butanol. Comparison with a conventionally gated OFET (SiO2 dielectric instead of PSSH) was also performed. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1679 / 1683
页数：5
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