Investigations in the β-Ga2O3/In2O3 system:: crystal growth of solid solutions

被引：25

作者：

Patzke, G ^{[1
]}

Binnewies, M ^{[1
]}

机构：

[1] Univ Hannover, Inst Inorgan Chem, D-30167 Hannover, Germany

来源：

SOLID STATE SCIENCES | 2000年 / 2卷 / 07期

关键词：

chemical transport reactions; beta-(Ga; In)(2)O-3 solid solutions; thermodynamic calculations;

D O I：

10.1016/S1293-2558(00)01072-4

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The 9-Ga2O3/In2O3 system is investigated by means of chemical transport reactions (CTR) Bath beta -Ga2O3-rich as In2O3-lich solid solutions can be deposited: beta -Ga2O3 (In2O3) with a maximum In2O3-content of 48 mol% ('GalnO(3)', an important transparent conducting oxide) and In2O3(beta -Ga2O3 with less than 10 mol% beta -Ga2O3. Moreover, extended solid solutions in beta -Ga2O3/In2O3/M2O3 systems (M=Fe, Cr) are accessible via chemical transport reactions. Moessbauer spectroscopy indicates a structural disorder in crystals of the beta-(Ga, In, Fe)(2)O-3 type. All experiments performed can be modeled in detail by thermodynamic calculations, (C) 2000 Editions scientifiques et medicales Elsevier SAS, All rights reserved.

引用

页码：689 / 699

页数：11

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