Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

被引：65

作者：

Nishioka, K

Takamoto, T

Agui, T

Kaneiwa, M

Uraoka, Y

Fuyuki, T

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] Sharp Co Ltd, Shinjo, Nara 6392198, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 85卷 / 03期

关键词：

multi-junction solar cell; temperature coefficient; concentration; fresnel lenses;

D O I：

10.1016/j.solmat.2004.05.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Temperature characteristics of the open-circuit voltage (V-oc) were investigated in the temperature range from 30degreesC to 240degreesC for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170degreesC to 240degreesC), the temperature coefficients of V-oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV(oc)/dT) were different from those in the low-temperature range (from 30degreesC to 100degreesC). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120degreesC under 1 sun condition. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：429 / 436

页数：8