Transport properties of boron-carbon and boron-nitride quantum dot device

被引：0
作者：
Li Gui-Qin [1 ]
机构：
[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
ACTA PHYSICA SINICA | 2010年 / 59卷 / 07期
关键词：
boron-carbon; boron-nitride; quantum dot device; transport property;
D O I：
10.7498/aps.59.4985
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The transport properties and I-V characteristics of boron-carbon and boron-nitride quantum dot devices are investigated by first principles method. The results of the B-C and B-N devices consisting of the same number of atoms have significant differences. There is large density of states near the Fermi energy for B-C device. A wide gap in the density of states of B-N device exists and the Fermi energy lies in the gap. The B-C device reveals metal property and the B-N devices appear as semiconductors.
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页码：4985 / 4988
页数：4
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