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Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT
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Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode
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2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD),
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Localized buried P-doped region for E-mode GaN MISHEMTs
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