Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

被引：33
作者：
Chen, Y. Q. [1 ]
Feng, J. T. [2 ]
Wang, J. L. [2 ]
Xu, X. B. [1 ]
He, Z. Y. [1 ]
Li, G. Y. [2 ]
Lei, D. Y. [1 ]
Chen, Y. [1 ]
Huang, Y. [1 ]
机构：
[1] Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China
[2] South China Univ Technol, Guangzhou 510610, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 02期
关键词：
Electrostatic discharge (ESD); gallium nitride; high electron mobility transistor (HEMT); low-frequency noise (LFN); p-GaN; trap;
D O I：
10.1109/TED.2019.2959299
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation behavior and its mechanisms of E-mode GaN high electron mobility transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were investigated. Reverse short-pulse stress was generated by a transmission line pulse (TLP) tester in order to simulate the static electricity. The experiment results show that the reverse short-pulse stress leads to the characteristic degradation of the E-mode GaN HEMTs with p-GaN gate. The values of the threshold voltage and ON-resistance increase, and the gate capacitance curve shifts positively. The low-frequency noises (LFNs) were obtained for the E-mode GaN HEMTs with p-GaN gate before and after the reverse short-pulse stress. The concentration of traps was extracted, and it has doubled after 700 cycles. The degradation mechanism could be attributed to the generation of traps at p-GaN/AlGaN heterointerface, AlGaN barrier, and GaN/AlGaN interface. Such an investigation can be a significant reference in the design and application of E-mode GaN power devices.
引用
收藏
页码：566 / 570
页数：5
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