III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition

被引：1
作者：
Dupuis, Russell D. [1 ,2 ,3 ]
Detchprohm, Theeradetch [1 ,2 ]
Ji, Hi-Hee [1 ,2 ]
Bakhtiary-Noodeh, Marzieh [3 ]
Jeong, Hoon [1 ,2 ]
Chen, Ping [1 ,2 ]
Shen, Shyh-Chiang [1 ,2 ]
Tsou, Chuan-Wei [1 ,2 ]
Mehta, Karan [1 ,2 ]
Yoder, P. Douglas [1 ,2 ]
机构：
[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源：
UV AND HIGHER ENERGY PHOTONICS: FROM MATERIALS TO APPLICATIONS 2019 | 2019年 / 11086卷
基金：
美国国家科学基金会;
关键词：
Metalorganic chemical vapor deposition; III-V semiconductors; deep ultraviolet; lasers; photodetectors; avalanche photodiodes; BRAGG; LASER;
D O I：
10.1117/12.2540048
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the current progress of our development of near-ultraviolet (NUV) III-nitride vertical-cavity LED emitters and avalanche photodetectors grown by metalorganic chemical vapor deposition (MOCVD). The III-N emitters are designed to be UV vertical-cavity surface-emitting lasers operating at 369.5nm. We describe the development of the growth and processing of an air-gap/AlGaN distributed Bragg reflector (DBR) consisting of five-pairs of quarter-wavelength layers of Al0.12Ga0.88N and air-gap regions created by selective chemical etching. A 4-6 lambda cavity was employed in the laser structure. We also report on the electrical and optical emission characteristics of these microcavity emitters. The photodetectors are GaN- and AlGaN-based p-i-n avalanche photodiodes (APDs) designed for front-side illumination. We report on the electrical and optical detection characteristics of these photodetectors.
引用
收藏
页数：7
相关论文
共 23 条
[1]   Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications [J].
Abid, M. ;
Moudakir, T. ;
Orsal, G. ;
Gautier, S. ;
Naciri, A. En ;
Djebbour, Z. ;
Ryou, J. -H. ;
Patriarche, G. ;
Largeau, L. ;
Kim, H. J. ;
Lochner, Z. ;
Pantzas, K. ;
Alamarguy, D. ;
Jomard, F. ;
Dupuis, R. D. ;
Salvestrini, J. -P. ;
Voss, P. L. ;
Ougazzaden, A. .
APPLIED PHYSICS LETTERS, 2012, 100 (05)
[2]   Blue-violet boron-based Distributed Bragg Reflectors for VCSEL application [J].
Abid, M. ;
Moudakir, T. ;
Djebbour, Z. ;
Orsal, G. ;
Gautier, S. ;
Naciri, A. En ;
Migan-Dubois, A. ;
Ougazzaden, A. .
JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) :283-287
[3]  
Arita M, 2002, PHYS STATUS SOLIDI A, V194, P403, DOI 10.1002/1521-396X(200212)194:2<403::AID-PSSA403>3.0.CO
[4]  
2-2
[5]   Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors -: art. no. 031107 [J].
Carlin, JF ;
Dorsaz, J ;
Feltin, E ;
Butté, R ;
Grandjean, N ;
Ilegems, M ;
Laügt, M .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[6]   High reflectance membrane-based distributed Bragg reflectors for GaN photonics [J].
Chen, Danti ;
Han, Jung .
APPLIED PHYSICS LETTERS, 2012, 101 (22)
[7]   ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :68-69
[8]   VCSEL transmission at 10 Gb/s for 20 km single mode fiber WDM-PON without dispersion compensation or injection locking [J].
Gibbon, T. B. ;
Prince, K. ;
Pham, T. T. ;
Tatarczak, A. ;
Neumeyr, C. ;
Roenneberg, E. ;
Ortsiefer, M. ;
Monroy, I. Tafur .
OPTICAL FIBER TECHNOLOGY, 2011, 17 (01) :41-45
[9]   VCSEL end-pumped passively Q-switched Nd:YAG laser with adjustable pulse energy [J].
Goldberg, Lew ;
McIntosh, Chris ;
Cole, Brian .
OPTICS EXPRESS, 2011, 19 (05) :4261-4267
[10]   Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition [J].
Huang, GS ;
Lu, TC ;
Yao, HH ;
Kuo, HC ;
Wang, SC ;
Lin, CW ;
Chang, L .
APPLIED PHYSICS LETTERS, 2006, 88 (06)
123